Seminar | August 26 | 2-3 p.m. | 180 Tan Hall
Prof. Sayeef Salahuddin, UC Berkeley, EECS E3S
Berkeley Nanosciences and Nanoengineering Institute
Over the last decade, our computing capability has increased by orders of magnitude. We truly are witnessing a revolution. Energy efficiency is critical not only to maintain this incessant advancement, but also to ensure that electronics does not become a drag on the finite energy resources of the world. This will need a radical rethinking of the basic building blocks that constitute the electronic hardware.
In this talk, I shall briefly present a couple of examples in this regard. First, I shall discuss the phenomenon of negative capacitance in ferroelectric materials. A fundamentally new state in the ferroelectrics, negative capacitance promises to reduce power consumption in electronic devices significantly.
I shall discuss our current understanding of negative capacitance derived from numerous experimental works done over the last few years. We shall further discuss the material science that is enabling the integration of negative capacitance into advanced transistors.
Going beyond transistors, the insight gained from physics and materials of negative capacitance could also lead to advanced, low power memory devices. I shall briefly present our recent work on new computational paradigms that aim to exploit the tremendous bandwidth and parallelism afforded by such
efficient memory technologies.
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Sayeef Salahuddin did his PhD at Purdue and joined UCB EECS in 2008. Awards include the PECASE and the NSF CAREER, and he is a fellow of IEEE and APS. He's received much early career Nanotech recognition.
victorr@eecs.berkeley.edu, 510-643-6681
Avi Rosenzweig, victorr@eecs.berkeley.edu, 510-643-6681